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| Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage Collector current (DC) DC current gain IC = 150 mA; VCE = 1 V Total power dissipation up to Tamb = 25 C RATINGS (at TA = 25C unless otherwise specified) Limiting values Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current (DC) Total power dissipation up to Tamb = 25C Storage temperature range Junction temperature VCEO IC hFE Ptot max. max. min. max. max 40 V 600 mA 100 300 250 mW VCEO VCBO VEBO IC Ptot Tstg Tj max. 40 V max. 60 V max. 6V max. 600 mA max 250 mW -55 to +150 C max. 150 C Continental Device India Limited Data Sheet Page 1 of 3 CMBT4401 THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tamb = 25 C unless otherwise specified Collector-emitter breakdown voltage IC = 1.0 mA; IB = 0 Collector-base breakdown voltage IC = 100 A; IE = 0 Emitter-base breakdown voltage IE = 100 A; IC = 0 Base cut-off current VCE = 35 V; VEB = 0.4 V Collector cut-off current VCE = 35 V; VEB = 0.4 V D.C. current gain IC = 0.1 mA; VCE = 1 V IC = 1.0 mA; VCE = 1 V IC = 10 mA; VCE = 1 V IC = 150 mA; VCE = 1 V IC = 500 mA; VCE = 2 V Saturation voltage IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA Transition frequency f = 100 MHz; IC = 20 mA; VCE = 10 V Collector-base capacitance IE = 0; VCB = 5 V; f = 100 kHz Emitter-base capacitance IC = 0; VBE = 0.5 V; f = 100 kHz Input impedance; f = 1 kHz; IC = 1 mA; VCE = 10 V Voltage feed-back ratio IC = 1 mA; VCE = 10 V; f = 1 kHz Small-signal curent gain; f = 1 kHz; IC = 1 mA; VCE = 10 V Rth j-a = 500 K/W V(BR)CEO > V(BR)CBO > V(BR)EBO > IBEX ICEX < < 40 V 60 V 6V 0.1 A 0.1 A hFE hFE hFE hFE hFE > > > > 20 40 80 100 to 300 40 VCEsat VBEsat VCEsat VBEsat fT Ccb C eb hie < < < > < < 0.4 V 0.75 to 0.95 V 0.75 V 1.2 V 250 MHz 8 pF 30 pF 1 k 8 k min. max. hre hfe min. 0.1 x 10 -4 max. 30 x 10-4 min. max. 40 500 Continental Device India Limited Data Sheet Page 2 of 3 CMBT4401 Output admittance; f = 1 kHz; IC = 1 mA; VCE = 10 V Switching times (resistive load) Turn-on time IC = 150 mA; IB1 = 15 mA; VCC = 30 V; VEB = 2 V delay time rise time Turn-off time IC = 150 mA; VCC = 30 V; IB1 = IB2 = 15 mA storage time fall time hoe min. max. 1 S 30 S td tr max. max. 15 ns 20 ns ts tf max. max. 225 ns 30 ns Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3 |
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